SI2337DS-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 80V 2.2A SOT23-3
$1.05
Available to order
Reference Price (USD)
3,000+
$0.47560
6,000+
$0.45327
15,000+
$0.43732
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SI2337DS-T1-GE3
$1.05
Product details
General specs
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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