SI2319CDS-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 40V 4.4A SOT23-3
$0.60
Available to order
Reference Price (USD)
3,000+
$0.22563
6,000+
$0.21188
15,000+
$0.19813
30,000+
$0.18850
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SI2319CDS-T1-GE3
$0.60
Product details
General specs
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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