SI2312CDS-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 6A SOT23-3
$0.46
Available to order
Reference Price (USD)
3,000+
$0.17148
6,000+
$0.16103
15,000+
$0.15058
30,000+
$0.14326
75,000+
$0.14250
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SI2312CDS-T1-GE3
$0.46
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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