SI1967DH-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2P-CH 20V 1.3A SC70-6
$0.43
Available to order
Reference Price (USD)
3,000+
$0.16245
6,000+
$0.15255
15,000+
$0.14265
30,000+
$0.13572
75,000+
$0.13500
Exquisite packaging
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SI1967DH-T1-GE3
$0.43
Product details
The SI1967DH-T1-GE3 by Vishay Siliconix is a premium MOSFET array in the Discrete Semiconductor Products category, specifically under Transistors - FETs, MOSFETs - Arrays. This product is engineered for high-efficiency power switching, making it ideal for advanced electronic systems.\n\nNotable features of the SI1967DH-T1-GE3 include optimized switching performance, low on-resistance, and excellent thermal conductivity. The array configuration allows for compact and efficient designs, reducing overall system complexity. Its high reliability ensures long-term performance in various applications.\n\nApplications include data centers, automotive infotainment, and portable devices. Data centers benefit from its efficiency in power distribution. Automotive infotainment systems rely on its performance for audio and display controls. Portable devices utilize its compact size and low power consumption.\n\nExplore the benefits of the SI1967DH-T1-GE3. Request a quote today to learn more about how it can enhance your designs. Our team is ready to assist with your technical and procurement needs.
General specs
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.3A
- Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
- Power - Max: 1.25W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
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