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SI1062X-T1-GE3

Vishay Siliconix
SI1062X-T1-GE3 Preview
Vishay Siliconix
MOSFET N-CH 20V SC89-3
$0.47
Available to order
Reference Price (USD)
3,000+
$0.08800
6,000+
$0.07920
15,000+
$0.07040
30,000+
$0.06600
75,000+
$0.05852
150,000+
$0.05632
Exquisite packaging
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Vishay Siliconix SI1062X-T1-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SI1062X-T1-GE3

SI1062X-T1-GE3

$0.47

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 8 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 220mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-3
  • Package / Case: SC-89, SOT-490

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