IRFSL9N60APBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 9.2A I2PAK
$2.99
Available to order
Reference Price (USD)
1+
$3.16000
10+
$2.82400
100+
$2.31590
500+
$1.87530
1,000+
$1.58158
3,000+
$1.50250
5,000+
$1.44602
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
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IRFSL9N60APBF
$2.99
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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