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IRFP21N60LPBF

Vishay Siliconix
IRFP21N60LPBF Preview
Vishay Siliconix
MOSFET N-CH 600V 21A TO247-3
$7.75
Available to order
Reference Price (USD)
1+
$8.14000
10+
$7.32600
100+
$6.02360
500+
$5.04680
1,000+
$4.39560
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Vishay Siliconix IRFP21N60LPBF is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IRFP21N60LPBF

IRFP21N60LPBF

$7.75

Product details

The IRFP21N60LPBF from Vishay Siliconix is a technologically advanced single MOSFET transistor belonging to the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - Single). This component sets new standards in power switching efficiency, offering designers a perfect balance between performance and reliability. Engineered with precision, the IRFP21N60LPBF demonstrates outstanding characteristics including fast switching capability, low power dissipation, and excellent thermal stability. These features make it particularly suitable for high-frequency applications and power-sensitive designs. The MOSFET finds extensive use in electric vehicle components, industrial welding equipment, and advanced power supply units. It's equally effective in consumer electronics such as high-efficiency LED drivers, smart appliances, and portable electronic devices. For infrastructure applications, the IRFP21N60LPBF proves invaluable in telecom power systems, base station equipment, and railway electronics. Its rugged design ensures consistent performance even in challenging operating conditions. Design engineers will appreciate the component's versatility and the design flexibility it offers across multiple voltage and current ranges. To learn more about how the IRFP21N60LPBF can enhance your specific application, we invite you to submit an online inquiry. Our technical sales team stands ready to provide detailed product information and purchasing options tailored to your project needs.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 320mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3

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