IRFBG20PBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 1000V 1.4A TO220AB
$1.92
Available to order
Reference Price (USD)
1+
$1.84000
50+
$1.48060
100+
$1.30140
500+
$1.01966
1,000+
$0.81480
2,500+
$0.76358
5,000+
$0.72773
Exquisite packaging
Discount
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| EMS | 3-7 days |
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IRFBG20PBF
$1.92
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 11Ohm @ 840mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 54W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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