IRF610PBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 3.3A TO220AB
$0.98
Available to order
Reference Price (USD)
1+
$0.84000
50+
$0.65520
100+
$0.57320
500+
$0.42942
1,000+
$0.34726
2,500+
$0.31646
5,000+
$0.29592
Exquisite packaging
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| EMS | 3-7 days |
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IRF610PBF
$0.98
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
