2N4338-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 50V 600UA TO-206AA
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2N4338-E3
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Product details
Enhance your circuit designs with the 2N4338-E3 JFET transistor from Vishay Siliconix, a standout in the Discrete Semiconductor Products lineup. This transistor is optimized for low-noise applications, offering exceptional signal clarity and efficiency. Its design focuses on minimizing power loss while maximizing performance, making it a preferred choice for battery-operated devices. The 2N4338-E3 excels in environments where signal integrity is paramount, such as in instrumentation and measurement systems. Features like high gain and low leakage current ensure reliable operation in demanding scenarios. Applications span across audio processing, signal conditioning, and RF modulation. Industries leveraging this technology include consumer electronics, aerospace, and industrial automation. The 2N4338-E3 is also well-suited for use in test and measurement equipment, where accuracy is critical. To explore how this JFET transistor can benefit your projects, contact us for a detailed quote and technical support.
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 50 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 200 µA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 300 mW
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-206AA (TO-18)
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