VS-GT100DA120UF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 187A 890W SOT227
$42.71
Available to order
Reference Price (USD)
1+
$40.29000
10+
$37.59200
25+
$36.01600
100+
$32.63950
250+
$31.51400
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VS-GT100DA120UF
$42.71
Product details
Optimize your industrial systems with the VS-GT100DA120UF IGBT module by Vishay General Semiconductor - Diodes Division. This discrete semiconductor product is crafted for high-efficiency power conversion, offering unmatched reliability and performance. The module s innovative design reduces heat generation and enhances energy savings, making it suitable for continuous operation. Key applications include traction systems in railways, where consistent power delivery is essential. It is also widely used in medical imaging equipment, ensuring precise and stable operation. Additionally, the VS-GT100DA120UF is ideal for data center power supplies, providing uninterrupted energy flow. With its superior features and broad applicability, this IGBT module is a smart investment for any high-power application. Submit your inquiry now to learn more about how the VS-GT100DA120UF can meet your specific requirements.
General specs
- Product Status: Active
- IGBT Type: Trench
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 187 A
- Power - Max: 890 W
- Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 100A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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