VS-GB75NA60UF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 109A 447W SOT227
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Reference Price (USD)
160+
$27.16344
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VS-GB75NA60UF
$0.00
Product details
The VS-GB75NA60UF IGBT module from Vishay General Semiconductor - Diodes Division is a premium solution for high-power applications in the discrete semiconductor products segment. With its cutting-edge technology, this module delivers superior efficiency and reliability. It features low conduction losses and high thermal conductivity, ensuring optimal performance in demanding environments. The VS-GB75NA60UF is widely used in industrial welding machines, providing stable and precise power control. It is also a preferred choice for servo drives, enhancing motion control accuracy. Furthermore, this module is ideal for renewable energy storage systems, supporting efficient energy management. For professionals seeking a high-performance IGBT module, the VS-GB75NA60UF is a reliable option. Submit your inquiry today to explore its full potential and get a competitive quote.
General specs
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 109 A
- Power - Max: 447 W
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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