VS-GB50TP120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 100A INT-A-PAK
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$69.64000
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VS-GB50TP120N
$0.00
Product details
The VS-GB50TP120N IGBT module from Vishay General Semiconductor - Diodes Division is a premium solution for high-power applications in the discrete semiconductor products segment. With its cutting-edge technology, this module delivers superior efficiency and reliability. It features low conduction losses and high thermal conductivity, ensuring optimal performance in demanding environments. The VS-GB50TP120N is widely used in industrial welding machines, providing stable and precise power control. It is also a preferred choice for servo drives, enhancing motion control accuracy. Furthermore, this module is ideal for renewable energy storage systems, supporting efficient energy management. For professionals seeking a high-performance IGBT module, the VS-GB50TP120N is a reliable option. Submit your inquiry today to explore its full potential and get a competitive quote.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 446 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-PAK (3 + 4)
- Supplier Device Package: INT-A-PAK
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