VS-ETF150Y65N
Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division
IGBT MOD 650V 201A 600W
$68.56
Available to order
Reference Price (USD)
1+
$71.99000
10+
$68.38900
25+
$66.58880
100+
$61.63970
Exquisite packaging
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Vishay General Semiconductor - Diodes Division VS-ETF150Y65N is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
Discover the VS-ETF150Y65N transistor module by Vishay General Semiconductor - Diodes Division, a standout in the discrete semiconductor products category. This high-performance component is designed for fast switching and low energy consumption, making it ideal for modern electronics. Its compact and robust design ensures easy integration and long-lasting performance. The VS-ETF150Y65N is commonly used in consumer electronics, such as televisions and gaming consoles, for efficient power management. It also plays a vital role in automotive electronics, enhancing vehicle safety and performance. Additionally, this transistor module is utilized in telecommunications equipment, ensuring reliable signal processing. If you re looking for a high-quality transistor module, the VS-ETF150Y65N is an excellent choice. Contact us today to learn more and place your order.
General specs
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 201 A
- Power - Max: 600 W
- Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 150A
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: 175°C (TJ)
- Mounting Type: -
- Package / Case: Module
- Supplier Device Package: Module