VS-ETF150Y65N
Vishay General Semiconductor - Diodes Division
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Vishay General Semiconductor - Diodes Division
IGBT MOD 650V 201A 600W
$68.56
Available to order
Reference Price (USD)
1+
$71.99000
10+
$68.38900
25+
$66.58880
100+
$61.63970
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Product details
General specs
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 201 A
- Power - Max: 600 W
- Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 150A
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: 175°C (TJ)
- Mounting Type: -
- Package / Case: Module
- Supplier Device Package: Module