VS-40MT120UHTAPBF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 1200V 80A 463W MTP
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Reference Price (USD)
105+
$89.02876
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VS-40MT120UHTAPBF
$0.00
Product details
Discover the VS-40MT120UHTAPBF transistor module by Vishay General Semiconductor - Diodes Division, a standout in the discrete semiconductor products category. This high-performance component is designed for fast switching and low energy consumption, making it ideal for modern electronics. Its compact and robust design ensures easy integration and long-lasting performance. The VS-40MT120UHTAPBF is commonly used in consumer electronics, such as televisions and gaming consoles, for efficient power management. It also plays a vital role in automotive electronics, enhancing vehicle safety and performance. Additionally, this transistor module is utilized in telecommunications equipment, ensuring reliable signal processing. If you re looking for a high-quality transistor module, the VS-40MT120UHTAPBF is an excellent choice. Contact us today to learn more and place your order.
General specs
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Power - Max: 463 W
- Vce(on) (Max) @ Vge, Ic: 4.91V @ 15V, 80A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 8.28 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 12-MTP Module
- Supplier Device Package: MTP
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