VS-2EFH01-M3/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 2A DO219AB
$0.10
Available to order
Reference Price (USD)
10,000+
$0.09986
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Vishay General Semiconductor - Diodes Division VS-2EFH01-M3/I is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
VS-2EFH01-M3/I
$0.10
Product details
Enhance your circuit designs with the VS-2EFH01-M3/I single rectifier diode by Vishay General Semiconductor - Diodes Division, engineered for precision and durability. This diode excels in converting AC to DC with minimal power loss, ensuring energy-efficient operation across a wide range of conditions. The VS-2EFH01-M3/I features optimized junction design for improved heat dissipation and long-term reliability. Its excellent rectification efficiency makes it suitable for high-frequency applications. Typical uses include switch-mode power supplies, LED drivers, and motor control circuits. The diode's robust construction withstands harsh environmental conditions, making it ideal for automotive and industrial applications. Additional benefits include low forward voltage drop and high reverse voltage capability. Explore how the VS-2EFH01-M3/I can improve your power management solutions by contacting our sales team for more information.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 24 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -65°C ~ 175°C
Viewed products
