VMMBZ33C1DD1HG3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
28V;IR=0.1UA;IP=1.7A;P=100W;CD=1
$0.41
Available to order
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VMMBZ33C1DD1HG3-08
$0.41
Product details
The VMMBZ33C1DD1HG3-08 by Vishay General Semiconductor - Diodes Division is a state-of-the-art TVS diode offering unparalleled protection against voltage spikes. This diode is engineered to deliver high-performance suppression of transient voltages, making it ideal for sensitive electronic circuits. Its innovative design ensures fast response times and high energy absorption, critical for applications in medical devices, data centers, and industrial equipment. The VMMBZ33C1DD1HG3-08 boasts low capacitance and excellent thermal stability, ensuring consistent performance under varying conditions. With its reliable clamping capability, this diode is a must-have for any high-stakes application. Elevate your circuit protection with the VMMBZ33C1DD1HG3-08 submit your inquiry now to explore purchasing options.
General specs
- Product Status: Active
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 28V (Max)
- Voltage - Breakdown (Min): 32.7V
- Voltage - Clamping (Max) @ Ipp: 59V
- Current - Peak Pulse (10/1000µs): 300mA
- Power - Peak Pulse: 15W
- Power Line Protection: No
- Applications: Automotive
- Capacitance @ Frequency: 8pF @ 1MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 0402 (1006 Metric)
- Supplier Device Package: DFN1006-2B
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