VMMBZ33C1DD1-G3-08
Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division
28V;IR=0.1UA;IP=1.7A;P=100W;CD=1
$0.41
Available to order
Reference Price (USD)
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$0.41000
500+
$0.4059
1000+
$0.4018
1500+
$0.3977
2000+
$0.3936
2500+
$0.3895
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Product details
Discover the VMMBZ33C1DD1-G3-08 from Vishay General Semiconductor - Diodes Division, a high-performance TVS diode designed for robust circuit protection in demanding environments. This product excels in safeguarding sensitive electronic components from voltage spikes and transient surges, ensuring reliable operation. Ideal for industrial and automotive applications, the VMMBZ33C1DD1-G3-08 offers superior clamping performance and fast response times. Its compact design allows for easy integration into various circuit layouts, making it a versatile choice for engineers. With exceptional durability and thermal stability, this TVS diode is built to withstand harsh conditions. Key features include low leakage current, high surge capability, and excellent ESD protection. Common applications include power supplies, communication systems, and automotive electronics. Protect your circuits with the VMMBZ33C1DD1-G3-08 and minimize downtime. Submit your inquiry today to learn more about pricing and availability.
General specs
- Product Status: Active
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 28V (Max)
- Voltage - Breakdown (Min): 32.7V
- Voltage - Clamping (Max) @ Ipp: 59V
- Current - Peak Pulse (10/1000µs): 300mA
- Power - Peak Pulse: 15W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 8pF @ 1MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 0402 (1006 Metric)
- Supplier Device Package: DFN1006-2B