VB20202G-M3/4W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 200V 20A TO263AB
$1.02
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Reference Price (USD)
3,000+
$1.00604
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VB20202G-M3/4W
$1.02
Product details
The VB20202G-M3/4W from Vishay General Semiconductor - Diodes Division is a high-efficiency rectifier diode array designed for compact and high-power applications. Part of the Discrete Semiconductor Products family, this array integrates multiple diodes to streamline your PCB design. Its superior thermal management ensures reliable performance in industrial motor drives and power supplies. The VB20202G-M3/4W is also ideal for use in telecommunications equipment, providing stable power conversion for network infrastructure. In renewable energy systems, it enhances the efficiency of solar and wind power inverters. Automotive applications include hybrid and electric vehicle powertrains. With its high isolation voltage and low leakage current, the VB20202G-M3/4W is a dependable solution for critical power management tasks. Trust Vishay General Semiconductor - Diodes Division for high-quality diode arrays that meet your technical specifications. Get in touch with us today for pricing and delivery options.
General specs
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 µA @ 200 V
- Operating Temperature - Junction: -40°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
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