VB20120C-M3/4W
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20A 120V TO-263AB
$0.87
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Reference Price (USD)
3,000+
$0.74214
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VB20120C-M3/4W
$0.87
Product details
Optimize your power management systems with the VB20120C-M3/4W rectifier diode from Vishay General Semiconductor - Diodes Division, a standout in the Diodes - Rectifiers - Arrays category. This diode excels in high-frequency applications, offering fast recovery times and low power dissipation. Its rugged design ensures durability in harsh environments, making it suitable for military and aerospace applications. The VB20120C-M3/4W is also widely used in medical devices, where precision and reliability are paramount. In industrial settings, it enhances the performance of CNC machines and servo drives. For consumer electronics, this diode is a popular choice for laptops, tablets, and smartphones. Its versatility extends to renewable energy systems, where it improves the efficiency of micro-inverters and power optimizers. Upgrade to the VB20120C-M3/4W and experience top-tier rectification technology. Request a sample or place your order today to see the difference for yourself.
General specs
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 700 µA @ 120 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
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