V10P12HM3_A/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 120V 10A TO277A
$0.37
Available to order
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$0.3637854
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$0.3601108
1500+
$0.3564362
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$0.3527616
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$0.349087
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V10P12HM3_A/I
$0.37
Product details
The V10P12HM3_A/I by Vishay General Semiconductor - Diodes Division is a premium-quality single rectifier diode designed for demanding electronic applications. This component offers outstanding rectification efficiency with low forward voltage drop, ensuring optimal power conversion performance. Its robust construction features advanced junction technology for improved current handling and thermal stability. The diode's fast switching characteristics make it ideal for high-frequency power supplies and switching regulators. Industrial applications include welding equipment, elevator controls, and factory automation systems. The V10P12HM3_A/I also excels in renewable energy systems such as wind turbine converters. Key benefits include excellent reverse recovery properties and consistent operation across temperature extremes. Designed for reliability, this diode meets rigorous industry standards for quality and performance. Whether for prototyping or mass production, the V10P12HM3_A/I delivers exceptional results. Submit your inquiry now to access this high-performance rectifier solution for your technical requirements.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400 µA @ 120 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 150°C
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