US1J-E3/61T
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO214AC
$0.40
Available to order
Reference Price (USD)
1,800+
$0.12198
3,600+
$0.11104
5,400+
$0.10557
12,600+
$0.09737
45,000+
$0.09190
90,000+
$0.08916
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US1J-E3/61T
$0.40
Product details
The US1J-E3/61T by Vishay General Semiconductor - Diodes Division is a premium-quality single rectifier diode designed for demanding electronic applications. This component offers outstanding rectification efficiency with low forward voltage drop, ensuring optimal power conversion performance. Its robust construction features advanced junction technology for improved current handling and thermal stability. The diode's fast switching characteristics make it ideal for high-frequency power supplies and switching regulators. Industrial applications include welding equipment, elevator controls, and factory automation systems. The US1J-E3/61T also excels in renewable energy systems such as wind turbine converters. Key benefits include excellent reverse recovery properties and consistent operation across temperature extremes. Designed for reliability, this diode meets rigorous industry standards for quality and performance. Whether for prototyping or mass production, the US1J-E3/61T delivers exceptional results. Submit your inquiry now to access this high-performance rectifier solution for your technical requirements.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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