UGB8DT-E3/81
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO263AB
$1.37
Available to order
Reference Price (USD)
800+
$0.80259
1,600+
$0.65186
2,400+
$0.61418
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UGB8DT-E3/81
$1.37
Product details
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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