SS1FN6-M3/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO219AB
$0.06
Available to order
Reference Price (USD)
30,000+
$0.05700
Exquisite packaging
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SS1FN6-M3/I
$0.06
Product details
General specs
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 800 µA @ 60 V
- Capacitance @ Vr, F: 90pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -55°C ~ 150°C
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