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SM8S11AHE3_A/I

Vishay General Semiconductor - Diodes Division
SM8S11AHE3_A/I Preview
Vishay General Semiconductor - Diodes Division
TVS DIODE 11VWM 18.2VC DO218AB
$4.29
Available to order
Reference Price (USD)
750+
$2.56291
Exquisite packaging
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Vishay General Semiconductor - Diodes Division SM8S11AHE3_A/I is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SM8S11AHE3_A/I

SM8S11AHE3_A/I

$4.29

Product details

The SM8S11AHE3_A/I by Vishay General Semiconductor - Diodes Division is a state-of-the-art TVS diode offering unparalleled protection against voltage spikes. This diode is engineered to deliver high-performance suppression of transient voltages, making it ideal for sensitive electronic circuits. Its innovative design ensures fast response times and high energy absorption, critical for applications in medical devices, data centers, and industrial equipment. The SM8S11AHE3_A/I boasts low capacitance and excellent thermal stability, ensuring consistent performance under varying conditions. With its reliable clamping capability, this diode is a must-have for any high-stakes application. Elevate your circuit protection with the SM8S11AHE3_A/I submit your inquiry now to explore purchasing options.

General specs

  • Product Status: Active
  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 11V
  • Voltage - Breakdown (Min): 12.2V
  • Voltage - Clamping (Max) @ Ipp: 18.2V
  • Current - Peak Pulse (10/1000µs): 363A
  • Power - Peak Pulse: 6600W (6.6kW)
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-218AB
  • Supplier Device Package: DO-218AB

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