NSB8KTHE3_B/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 8A TO263AB
$0.69
Available to order
Reference Price (USD)
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$0.69300
500+
$0.68607
1000+
$0.67914
1500+
$0.67221
2000+
$0.66528
2500+
$0.65835
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NSB8KTHE3_B/I
$0.69
Product details
The NSB8KTHE3_B/I single rectifier diode from Vishay General Semiconductor - Diodes Division sets new standards for power handling and efficiency in discrete semiconductor components. This diode features an optimized balance between forward conduction characteristics and reverse blocking capability, making it ideal for various rectification applications. Its construction incorporates advanced materials for enhanced thermal performance and long service life. The NSB8KTHE3_B/I is particularly suited for power supply units, voltage multipliers, and protection circuits. Industrial applications benefit from its ability to operate reliably under fluctuating load conditions. Additional advantages include excellent surge current handling and stable performance across temperature variations. This diode finds extensive use in aerospace systems, marine electronics, and heavy machinery controls. With its combination of performance and reliability, the NSB8KTHE3_B/I is an excellent choice for critical electronic systems. Contact us today to learn more about this exceptional rectifier solution.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Capacitance @ Vr, F: 55pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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