NSB8JTHE3_B/P
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO263AB
$0.69
Available to order
Reference Price (USD)
1+
$0.69300
500+
$0.68607
1000+
$0.67914
1500+
$0.67221
2000+
$0.66528
2500+
$0.65835
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NSB8JTHE3_B/P
$0.69
Product details
Discover the versatility of Vishay General Semiconductor - Diodes Division's NSB8JTHE3_B/P single rectifier diode, engineered for precision power control in modern electronics. This component delivers efficient AC to DC conversion with minimal energy loss, thanks to its advanced semiconductor technology. The diode features excellent forward bias characteristics and reliable reverse voltage protection, ensuring stable operation in diverse circuit configurations. Its compact package design facilitates easy PCB integration while maintaining superior thermal properties. Common applications include solar power systems, uninterruptible power supplies, and audio amplification equipment. The NSB8JTHE3_B/P performs exceptionally well in high-temperature environments, making it suitable for automotive under-hood applications. Other notable features include fast response times and consistent performance under varying load conditions. Electrical engineers will appreciate its reliability in critical power management tasks. To explore how this diode can enhance your designs, request product specifications and pricing information today.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 55pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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