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MSE1PJ-M3/89A

Vishay General Semiconductor - Diodes Division
MSE1PJ-M3/89A Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A MICROSMP
$0.37
Available to order
Reference Price (USD)
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$0.06958
9,000+
$0.06133
13,500+
$0.05308
31,500+
$0.05033
112,500+
$0.04482
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MSE1PJ-M3/89A

MSE1PJ-M3/89A

$0.37

Product details

Experience superior rectification performance with the MSE1PJ-M3/89A single diode from Vishay General Semiconductor - Diodes Division, engineered for excellence in power electronics. This component offers an optimal balance between forward voltage characteristics and reverse leakage current, ensuring efficient energy conversion. The diode's advanced construction provides excellent thermal stability and long-term reliability in continuous operation. Designers will appreciate its versatility in applications ranging from consumer appliances to industrial power systems. The MSE1PJ-M3/89A performs exceptionally well in UPS systems, electric vehicle power trains, and renewable energy converters. Its robust design withstands electrical transients and mechanical stress, making it ideal for transportation and infrastructure applications. Additional benefits include consistent batch-to-batch performance and compatibility with automated assembly processes. For engineers seeking a reliable rectification solution, the MSE1PJ-M3/89A delivers outstanding results. Contact us today to learn more about this high-performance diode and its applications.

General specs

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 780 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 5pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: MicroSMP
  • Supplier Device Package: MicroSMP (DO-219AD)
  • Operating Temperature - Junction: -55°C ~ 175°C

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