GSIB660N-M3/45
Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 600V 6A GSIB-5S
$1.54
Available to order
Reference Price (USD)
1,200+
$1.12941
Exquisite packaging
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Product details
The GSIB660N-M3/45 from Vishay General Semiconductor - Diodes Division is a premium bridge rectifier designed for high-performance power conversion. With superior rectification efficiency and minimal power loss, this diode is perfect for consumer electronics, industrial machinery, and renewable energy systems. Its advanced design ensures reliable operation under high load conditions, providing long-term stability. The GSIB660N-M3/45 exemplifies Vishay General Semiconductor - Diodes Division's dedication to innovation and quality. Whether for prototyping or mass production, this bridge rectifier meets your technical requirements. Reach out to us for detailed specifications and pricing information.
General specs
- Product Status: Active
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 6 A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GSIB-5S
- Supplier Device Package: GSIB-5S