GSIB660-E3/45
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 600V 2.8A GSIB-5S
$2.57
Available to order
Reference Price (USD)
1+
$1.95000
10+
$1.74900
25+
$1.65000
100+
$1.40580
250+
$1.32000
500+
$1.15500
1,200+
$0.95700
3,600+
$0.89100
6,000+
$0.85800
Exquisite packaging
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| EMS | 3-7 days |
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GSIB660-E3/45
$2.57
Product details
General specs
- Product Status: Active
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 2.8 A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GSIB-5S
- Supplier Device Package: GSIB-5S
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