FESB8JTHE3_A/P
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO263AB
$0.89
Available to order
Reference Price (USD)
1+
$0.89100
500+
$0.88209
1000+
$0.87318
1500+
$0.86427
2000+
$0.85536
2500+
$0.84645
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FESB8JTHE3_A/P
$0.89
Product details
Vishay General Semiconductor - Diodes Division's FESB8JTHE3_A/P single rectifier diode delivers exceptional performance in a compact, reliable package. This component is designed for efficient power rectification with minimal energy loss, featuring advanced semiconductor materials for optimal thermal management. The diode exhibits excellent forward conduction characteristics and reliable reverse blocking capability, making it suitable for diverse electronic systems. Its fast recovery time ensures efficient operation in high-frequency switching applications. Primary uses include telecommunications infrastructure, server power supplies, and medical imaging equipment. The FESB8JTHE3_A/P also performs well in harsh environment applications such as downhole drilling instrumentation. Key features include superior surge current tolerance and stable operation across temperature variations. Engineers will appreciate its consistent performance in precision power conversion tasks. For technical specifications and purchasing options, contact our expert team to discuss your application requirements.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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