FESB8JT-E3/81
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO263AB
$1.41
Available to order
Reference Price (USD)
800+
$0.82730
1,600+
$0.67193
2,400+
$0.63309
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FESB8JT-E3/81
$1.41
Product details
Enhance your circuit designs with the FESB8JT-E3/81 single rectifier diode by Vishay General Semiconductor - Diodes Division, engineered for precision and durability. This diode excels in converting AC to DC with minimal power loss, ensuring energy-efficient operation across a wide range of conditions. The FESB8JT-E3/81 features optimized junction design for improved heat dissipation and long-term reliability. Its excellent rectification efficiency makes it suitable for high-frequency applications. Typical uses include switch-mode power supplies, LED drivers, and motor control circuits. The diode's robust construction withstands harsh environmental conditions, making it ideal for automotive and industrial applications. Additional benefits include low forward voltage drop and high reverse voltage capability. Explore how the FESB8JT-E3/81 can improve your power management solutions by contacting our sales team for more information.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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