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ESH3DHE3_A/I

Vishay General Semiconductor - Diodes Division
ESH3DHE3_A/I Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3A DO214AB
$0.32
Available to order
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$0.3175524
1000+
$0.3143448
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$0.3079296
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$0.304722
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ESH3DHE3_A/I

ESH3DHE3_A/I

$0.32

Product details

General specs

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 70pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 175°C

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