ES1BHE3_A/H
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO214AC
$0.41
Available to order
Reference Price (USD)
1,800+
$0.13195
3,600+
$0.12220
5,400+
$0.11570
12,600+
$0.10920
45,000+
$0.10595
Exquisite packaging
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ES1BHE3_A/H
$0.41
Product details
The ES1BHE3_A/H by Vishay General Semiconductor - Diodes Division is a premium-quality single rectifier diode designed for demanding electronic applications. This component offers outstanding rectification efficiency with low forward voltage drop, ensuring optimal power conversion performance. Its robust construction features advanced junction technology for improved current handling and thermal stability. The diode's fast switching characteristics make it ideal for high-frequency power supplies and switching regulators. Industrial applications include welding equipment, elevator controls, and factory automation systems. The ES1BHE3_A/H also excels in renewable energy systems such as wind turbine converters. Key benefits include excellent reverse recovery properties and consistent operation across temperature extremes. Designed for reliability, this diode meets rigorous industry standards for quality and performance. Whether for prototyping or mass production, the ES1BHE3_A/H delivers exceptional results. Submit your inquiry now to access this high-performance rectifier solution for your technical requirements.
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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