BZD27C33P-HE3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 33V 800MW DO219AB
$0.15
Available to order
Reference Price (USD)
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$0.15362
500+
$0.1520838
1000+
$0.1505476
1500+
$0.1490114
2000+
$0.1474752
2500+
$0.145939
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BZD27C33P-HE3-18
$0.15
Product details
The BZD27C33P-HE3-18 by Vishay General Semiconductor - Diodes Division is a premium single Zener diode, perfect for engineers working with Discrete Semiconductor Products. This diode excels in maintaining voltage stability, offering precise regulation for a variety of electronic applications. Its advanced design ensures low impedance and high reliability, even under fluctuating load conditions. Key benefits include excellent thermal performance, tight voltage tolerance, and robust surge handling capabilities. These features make the BZD27C33P-HE3-18 ideal for use in power management modules, automotive electronics, and industrial automation systems. Additionally, it performs exceptionally well in portable devices and IoT applications where energy efficiency is critical. Vishay General Semiconductor - Diodes Division's commitment to quality ensures that the BZD27C33P-HE3-18 meets the highest industry standards. Don't miss the opportunity to enhance your projects with this top-tier Zener diode. Submit your inquiry today to discover how it can benefit your specific application.
General specs
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 33 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 24 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
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