BZD27C30P-HE3-08
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 30V 800MW DO219AB
$0.45
Available to order
Reference Price (USD)
3,000+
$0.16572
6,000+
$0.15641
15,000+
$0.14710
30,000+
$0.14058
75,000+
$0.13779
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BZD27C30P-HE3-08
$0.45
Product details
Upgrade your voltage regulation solutions with the BZD27C30P-HE3-08 Zener diode by Vishay General Semiconductor - Diodes Division, a leading name in Discrete Semiconductor Products. This single Zener diode is engineered for accuracy and durability, making it a versatile choice for various electronic applications. Its standout features include minimal power dissipation, fast response times, and excellent thermal performance. These qualities make the BZD27C30P-HE3-08 ideal for use in aerospace, defense, and telecommunications systems. It also performs exceptionally well in consumer electronics and renewable energy applications, ensuring consistent voltage levels. Vishay General Semiconductor - Diodes Division's reputation for high-quality semiconductors is reflected in the BZD27C30P-HE3-08's reliable performance. Don't wait to incorporate this top-performing Zener diode into your designs. Submit your inquiry today to explore pricing and availability options.
General specs
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 30 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 15 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 22 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
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