BZD27B51P-M3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 800MW DO219AB
$0.12
Available to order
Reference Price (USD)
50,000+
$0.08960
Exquisite packaging
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BZD27B51P-M3-18
$0.12
Product details
Enhance your circuit designs with the BZD27B51P-M3-18 Zener diode from Vishay General Semiconductor - Diodes Division, a standout in the Discrete Semiconductor Products category. This single Zener diode is engineered for precise voltage clamping and regulation, ensuring stable operation across a wide range of conditions. Its compact design and high efficiency make it a versatile component for both low-power and high-performance applications. Notable features include superior noise immunity, consistent breakdown voltage, and minimal power dissipation. These attributes are particularly beneficial in telecommunications equipment, medical devices, and renewable energy systems. The BZD27B51P-M3-18 is also well-suited for surge protection and voltage reference applications. Trust Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology to deliver a component that meets your exacting standards. Ready to integrate this reliable Zener diode into your designs? Contact us now for a quote and detailed specifications.
General specs
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 51 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 60 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 39 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
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