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BYM10-800HE3/97

Vishay General Semiconductor - Diodes Division
BYM10-800HE3/97 Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1A DO213AB
$0.14
Available to order
Reference Price (USD)
10,000+
$0.13843
Exquisite packaging
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Vishay General Semiconductor - Diodes Division BYM10-800HE3/97 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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BYM10-800HE3/97

BYM10-800HE3/97

$0.14

Product details

Optimize your power electronics with Vishay General Semiconductor - Diodes Division's BYM10-800HE3/97 single rectifier diode, a high-efficiency solution for modern circuit designs. This diode features superior current handling capabilities combined with low power dissipation, making it ideal for energy-conscious applications. The BYM10-800HE3/97 demonstrates excellent performance in voltage clamping, freewheeling, and reverse polarity protection circuits. Its advanced semiconductor design ensures reliable operation in switching power supplies, DC-DC converters, and battery management systems. The component's thermal characteristics allow for operation in high ambient temperature environments without performance degradation. Common industry applications include electric vehicle charging systems, industrial motor drives, and photovoltaic inverters. Additional advantages include consistent forward voltage characteristics and robust surge protection. Engineers will appreciate the diode's reliability in mission-critical power conversion tasks. For detailed technical information and volume pricing options, contact our sales team today.

General specs

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Capacitance @ Vr, F: 8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C

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