BA783-HE3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
RF DIODE PIN 35V SOD123
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BA783-HE3-18
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Product details
Upgrade your RF designs with the BA783-HE3-18 from Vishay General Semiconductor - Diodes Division, a premium offering in Discrete Semiconductor Products. This high-frequency diode provides exceptional performance in signal processing and power control applications. Its innovative design minimizes intermodulation distortion while maximizing power efficiency. The component delivers stable operation across wide frequency ranges with consistent parameters. Engineers value the BA783-HE3-18 for its excellent thermal stability and low noise characteristics. The diode's rugged construction ensures reliable performance in challenging environmental conditions. Its optimized junction geometry provides superior RF characteristics compared to standard diodes. Technical advantages include high third-order intercept point and excellent harmonic suppression. These qualities make it perfect for LTE/5G small cell equipment, microwave backhaul systems, and aerospace telemetry applications. Automotive infotainment systems benefit from its clean signal processing, while industrial sensors leverage its accurate detection capabilities. Scientific instruments requiring precise frequency control achieve better results with this component. Vishay General Semiconductor - Diodes Division has engineered the BA783-HE3-18 to address the most demanding RF challenges. Comprehensive testing validates each unit's performance before shipment. When your application requires uncompromising quality in RF components, this diode delivers exceptional value. Request a quotation or technical consultation through our website's inquiry system. Learn how the BA783-HE3-18 can optimize performance in your specific application scenario.
General specs
- Product Status: Obsolete
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 35V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 1.2pF @ 3V, 1MHz
- Resistance @ If, F: 1.2Ohm @ 3mA, 1GHz
- Power Dissipation (Max): -
- Operating Temperature: 125°C (TJ)
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
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