B80C800G-E4/51
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 125V 900MA WOG
$0.63
Available to order
Reference Price (USD)
1+
$0.56000
10+
$0.48200
25+
$0.45160
100+
$0.36660
250+
$0.34244
500+
$0.29404
1,000+
$0.23353
2,500+
$0.21538
5,000+
$0.20328
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B80C800G-E4/51
$0.63
Product details
General specs
- Product Status: Active
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 125 V
- Current - Average Rectified (Io): 900 mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
- Current - Reverse Leakage @ Vr: 10 µA @ 125 V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Circular, WOG
- Supplier Device Package: WOG
