1N5235B-TAP
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.8V 500MW DO35
$0.19
Available to order
Reference Price (USD)
10,000+
$0.02676
30,000+
$0.02436
50,000+
$0.02196
100,000+
$0.02076
250,000+
$0.01872
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1N5235B-TAP
$0.19
Product details
Optimize your voltage regulation with the 1N5235B-TAP Zener diode from Vishay General Semiconductor - Diodes Division, a key player in the Discrete Semiconductor Products market. This single Zener diode is designed to deliver consistent performance in voltage stabilization and protection circuits. Its high-quality construction ensures reliability and longevity, even in harsh operating conditions. The 1N5235B-TAP boasts features such as low dynamic impedance, excellent reverse leakage characteristics, and superior thermal management. These qualities make it an excellent choice for applications in aerospace, defense systems, and telecommunications infrastructure. It also shines in consumer electronics and power supply units, providing dependable voltage control. Vishay General Semiconductor - Diodes Division's reputation for innovation and quality is reflected in the 1N5235B-TAP's outstanding performance. Take the next step in your design process by requesting a quote today and see how this Zener diode can meet your needs.
General specs
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 6.8 V
- Tolerance: ±5%
- Power - Max: 500 mW
- Impedance (Max) (Zzt): 5 Ohms
- Current - Reverse Leakage @ Vr: 3 µA @ 5 V
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35 (DO-204AH)
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