UJ3N120035K3S
UnitedSiC
UnitedSiC
1200V 35 MOHM SIC JFET, G3, N-ON
$29.30
Available to order
Reference Price (USD)
1+
$29.30000
500+
$29.007
1000+
$28.714
1500+
$28.421
2000+
$28.128
2500+
$27.835
Exquisite packaging
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UJ3N120035K3S
$29.30
Product details
The UJ3N120035K3S by UnitedSiC is a premium JFET transistor designed for high-frequency applications within the Discrete Semiconductor Products range. Its advanced architecture ensures minimal signal loss and superior linearity, making it perfect for RF and microwave circuits. This transistor is built to handle rigorous operational demands, offering long-term stability and performance consistency. Key attributes include low noise figure, high transition frequency, and excellent thermal management. These features make the UJ3N120035K3S ideal for use in wireless communication systems, radar, and satellite technology. Additionally, it finds applications in medical imaging devices and scientific instrumentation, where precision is non-negotiable. The automotive sector also benefits from its reliability in harsh environments. For engineers seeking a dependable JFET transistor, the UJ3N120035K3S delivers unmatched quality. Request a quote now to integrate this high-performance component into your next design.
General specs
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 1200 V
- Drain to Source Voltage (Vdss): 1200 V
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: 63 A
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 2145pF @ 100V
- Resistance - RDS(On): 45 mOhms
- Power - Max: 429 W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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