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UF3C065080B3

UnitedSiC
UF3C065080B3 Preview
UnitedSiC
MOSFET N-CH 650V 25A TO263
$8.14
Available to order
Reference Price (USD)
1+
$8.14000
500+
$8.0586
1000+
$7.9772
1500+
$7.8958
2000+
$7.8144
2500+
$7.733
Exquisite packaging
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UnitedSiC UF3C065080B3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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UF3C065080B3

UF3C065080B3

$8.14

Product details

The UF3C065080B3 from UnitedSiC is a high-performance single MOSFET transistor designed for efficient power management in various electronic applications. This Discrete Semiconductor Product belongs to the Transistors - FETs, MOSFETs - Single category, offering reliable switching capabilities and low power dissipation. Ideal for both industrial and consumer electronics, this component ensures optimal performance in demanding environments. With its advanced design, the UF3C065080B3 provides enhanced thermal stability and durability, making it a preferred choice for engineers and designers. Whether you're developing power supplies, motor controls, or audio amplifiers, this MOSFET delivers consistent results. Key features include fast switching speeds, low on-resistance, and excellent thermal characteristics. These attributes contribute to improved energy efficiency and reduced heat generation in your circuits. The UF3C065080B3 finds applications in automotive systems, renewable energy solutions, and industrial automation equipment. For power inverters, battery management systems, or LED drivers, this component offers the reliability you need. Upgrade your designs with the UF3C065080B3 and experience superior performance. Contact us today for pricing and availability submit your inquiry online to get started!

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: -
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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