TPH3208PS
Transphorm
Transphorm
GANFET N-CH 650V 20A TO220AB
$10.47
Available to order
Reference Price (USD)
1+
$11.00000
10+
$9.90000
25+
$9.02000
100+
$8.14000
300+
$7.48000
600+
$6.82000
1,200+
$6.16000
Exquisite packaging
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TPH3208PS
$10.47
Product details
The TPH3208PS single MOSFET transistor from Transphorm represents excellence in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This high-efficiency component is engineered to meet the evolving demands of modern power electronics, offering superior switching performance and reliability. Key features of the TPH3208PS include optimized gate drive characteristics, low conduction resistance, and excellent thermal properties. These attributes contribute to reduced power losses and improved system efficiency in various applications. The MOSFET performs exceptionally in agricultural automation systems, construction equipment electronics, and marine power systems. For consumer applications, it's ideal for high-performance kitchen appliances, personal care devices, and home entertainment systems. The component also excels in security system power management and emergency lighting applications. With its robust design and electrical efficiency, the TPH3208PS provides design engineers with a reliable solution for diverse power control needs. Whether you're developing new products or upgrading existing systems, this MOSFET offers the performance and durability you require. Ready to explore how the TPH3208PS can enhance your designs? Submit your inquiry through our online portal to receive prompt assistance from our technical sales team, including detailed specifications and competitive pricing information.
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
- Vgs(th) (Max) @ Id: 2.6V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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