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TPH3208LDG

Transphorm
TPH3208LDG Preview
Transphorm
GANFET N-CH 650V 20A 3PQFN
$10.81
Available to order
Reference Price (USD)
1+
$11.35000
10+
$10.21500
60+
$9.30700
120+
$8.39900
300+
$7.71800
540+
$7.03700
1,020+
$6.35600
Exquisite packaging
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Transphorm TPH3208LDG is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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TPH3208LDG

TPH3208LDG

$10.81

Product details

The TPH3208LDG from Transphorm is a high-performance single MOSFET transistor designed for efficient power management in various electronic applications. This Discrete Semiconductor Product belongs to the Transistors - FETs, MOSFETs - Single category, offering reliable switching capabilities and low power dissipation. Ideal for both industrial and consumer electronics, this component ensures optimal performance in demanding environments. With its advanced design, the TPH3208LDG provides enhanced thermal stability and durability, making it a preferred choice for engineers and designers. Whether you're developing power supplies, motor controls, or audio amplifiers, this MOSFET delivers consistent results. Key features include fast switching speeds, low on-resistance, and excellent thermal characteristics. These attributes contribute to improved energy efficiency and reduced heat generation in your circuits. The TPH3208LDG finds applications in automotive systems, renewable energy solutions, and industrial automation equipment. For power inverters, battery management systems, or LED drivers, this component offers the reliability you need. Upgrade your designs with the TPH3208LDG and experience superior performance. Contact us today for pricing and availability submit your inquiry online to get started!

General specs

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
  • Vgs(th) (Max) @ Id: 2.6V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
  • Vgs (Max): ±18V
  • Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 96W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-PQFN (8x8)
  • Package / Case: 3-PowerDFN

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