TPH3208LDG
Transphorm
Transphorm
GANFET N-CH 650V 20A 3PQFN
$10.81
Available to order
Reference Price (USD)
1+
$11.35000
10+
$10.21500
60+
$9.30700
120+
$8.39900
300+
$7.71800
540+
$7.03700
1,020+
$6.35600
Exquisite packaging
Discount
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| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Transphorm TPH3208LDG is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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TPH3208LDG
$10.81
Product details
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
- Vgs(th) (Max) @ Id: 2.6V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-PQFN (8x8)
- Package / Case: 3-PowerDFN
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