TPH3205WSBQA
Transphorm
Transphorm
GANFET N-CH 650V 35A TO247-3
$22.97
Available to order
Reference Price (USD)
1+
$21.64000
10+
$20.01700
30+
$18.39400
120+
$17.09558
270+
$15.68900
510+
$15.14800
Exquisite packaging
Discount
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| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Transphorm TPH3205WSBQA is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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TPH3205WSBQA
$22.97
Product details
General specs
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 62mOhm @ 22A, 8V
- Vgs(th) (Max) @ Id: 2.6V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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