TPD3215M
Transphorm
Transphorm
GANFET 2N-CH 600V 70A MODULE
$175.13
Available to order
Reference Price (USD)
1+
$178.83000
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$172.66200
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TPD3215M
$175.13
Product details
Optimize your electronic designs with the TPD3215M MOSFET array from Transphorm, a standout in the Discrete Semiconductor Products category. This transistor array, part of the Transistors - FETs, MOSFETs - Arrays subcategory, delivers superior performance in power switching applications. Its compact design and high efficiency make it a preferred choice for engineers seeking reliable solutions.\n\nThe TPD3215M boasts features such as low gate drive requirements, high current handling capacity, and minimal switching losses. The array format provides multiple FETs in one package, streamlining PCB layout and reducing component count. Enhanced thermal management ensures stable operation even under high load conditions.\n\nApplications for the TPD3215M include industrial automation, renewable energy systems, and automotive electronics. In industrial automation, it drives actuators and sensors with precision. Renewable energy systems leverage its efficiency for solar inverters and wind turbine controls. Automotive electronics benefit from its durability and performance in harsh conditions.\n\nInterested in the TPD3215M? Contact us for a quote and discover how this MOSFET array can enhance your designs. Our experts are ready to support your technical and purchasing requirements.
General specs
- Product Status: Obsolete
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 8V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V
- Power - Max: 470W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: Module
- Supplier Device Package: Module
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