TP65H480G4JSG-TR
Transphorm
Transphorm
GANFET N-CH 650V 3.6A 3PQFN
$4.17
Available to order
Reference Price (USD)
1+
$4.17000
500+
$4.1283
1000+
$4.0866
1500+
$4.0449
2000+
$4.0032
2500+
$3.9615
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Transphorm TP65H480G4JSG-TR is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
TP65H480G4JSG-TR
$4.17
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V
- Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V
- Vgs(th) (Max) @ Id: 2.8V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 13.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-PQFN (5x6)
- Package / Case: 3-SMD, Flat Lead
Viewed products
