TP65H015G5WS
Transphorm
Transphorm
650 V 95 A GAN FET
$35.14
Available to order
Reference Price (USD)
1+
$35.14000
500+
$34.7886
1000+
$34.4372
1500+
$34.0858
2000+
$33.7344
2500+
$33.383
Exquisite packaging
Discount
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| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Transphorm TP65H015G5WS is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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TP65H015G5WS
$35.14
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4.8V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5218 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 266W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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