XPW4R10ANB,L1XHQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 70A AEC-Q101
$2.43
Available to order
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$2.3814
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$2.3328
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$2.3085
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XPW4R10ANB,L1XHQ
$2.43
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 70A
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
- FET Feature: Standard
- Power Dissipation (Max): 170W (Tc)
- Operating Temperature: -55°C ~ 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DSOP Advance
- Package / Case: 8-PowerVDFN
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